Home
Class 12
PHYSICS
A p-n photodiode is made of a material w...

A p-n photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A

`20 xx 10^(14) Hz`

B

`10 xx 10^(14) Hz`

C

`5 xx 10^(14) Hz`

D

`1 xx 10^(14) Hz`

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE ENGLISH|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE ENGLISH|Exercise Assignment section -B (Objective Type Question)|29 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE ENGLISH|Exercise ASSIGNMENT (SECTION - D)|16 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is made of a material with a band gap of 3.0 eV . The minimum frequency of the radiation that can be absorbed by the material is nearly

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is made of a material with a band gap of 1 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is fabricated from a semiconductor with band - gap of 2.8 eV . Can it detect a wavelength of 6000nm?

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

A p-n junction is fabricated from a semiconductor with band gap of 2.8eV . Can it detect a wavelength of 6000nm ?

The maximum kinetic energy of photoelectrons emitted from a metal surface increses from 0.4 eV to 1.2 eV when the frequency of the incident radiation is increased by 40% . What is the work function (in eV) of the metal surface?

Electrons from n = 2 to n= 1 in hydrogen atom is made to fall on a metal surface with work function 1.2ev. The maximum velocity of photo electrons emitted is nearly equal to

AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

    Text Solution

    |

  2. The circuit

    Text Solution

    |

  3. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  4. In the energy band diagram of a material shown below, the open circles...

    Text Solution

    |

  5. A common emitter amplifier has a voltage gain of 50, an input impedanc...

    Text Solution

    |

  6. In the following circuit, the output Y for all possible inputs A and B...

    Text Solution

    |

  7. For a cubic crystal structure which one of the following relation indi...

    Text Solution

    |

  8. A transistor is operated in common emitter configuration at constant c...

    Text Solution

    |

  9. A forward biased diode is

    Text Solution

    |

  10. The following figure shows a logic gate circuit with two inputs A and ...

    Text Solution

    |

  11. Application of forward bias to p-n junction

    Text Solution

    |

  12. Zener diode is used for:-

    Text Solution

    |

  13. Carbon, silicon and germanium have four valence electrons each. These ...

    Text Solution

    |

  14. Choose the false statement from the following.

    Text Solution

    |

  15. Copper has face-centered cubic (fcc) lattice with interatomic spacing ...

    Text Solution

    |

  16. The cations and anions are arranged n alternate form in:

    Text Solution

    |

  17. In semiconductors at a room temperature

    Text Solution

    |

  18. In good conductors of electricity the type of bonding that exist is

    Text Solution

    |

  19. In an insulator, the forbidden energy gap between the valence band and...

    Text Solution

    |

  20. In a p-n junction depletion region has a thickness of the order of

    Text Solution

    |