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A forward biased diode is...

A forward biased diode is

A

B

C

D

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The correct Answer is:
D
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A P-N junction diode can withstand currents up to 10 mA . Under forward bias, The diode has a potential drop of 0.5 V across it which is assumed to be independent of current. The maximum voltage of the battery used to forward bias the diode when a resistance of 200 Omega is connected in series with it is

A reverse biased diode is

When a diode is forward biased, it has a voltage drop of 0.5 V. The safe limit of current through the diode is 10 mA. If a battery of emf 1.5 V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is :

In the following diagram, is the junction diode forward biased or reverse biased ?

The forward biased conection is :

AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. For a cubic crystal structure which one of the following relation indi...

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  2. A transistor is operated in common emitter configuration at constant c...

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  3. A forward biased diode is

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  4. The following figure shows a logic gate circuit with two inputs A and ...

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  5. Application of forward bias to p-n junction

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  6. Zener diode is used for:-

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  7. Carbon, silicon and germanium have four valence electrons each. These ...

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  8. Choose the false statement from the following.

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  9. Copper has face-centered cubic (fcc) lattice with interatomic spacing ...

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  10. The cations and anions are arranged n alternate form in:

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  11. In semiconductors at a room temperature

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  12. In good conductors of electricity the type of bonding that exist is

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  13. In an insulator, the forbidden energy gap between the valence band and...

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  14. In a p-n junction depletion region has a thickness of the order of

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  15. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  16. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  17. In the case of forward biasing of PN-junction, which one of the follow...

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  18. When arsenic is added as an impurity to silicon, the resulting materia...

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  19. To obtain a p-type germanium semiconductor, it must be doped with

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  20. The cause of the potential barrier in a p-n diode is

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