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Carbon, silicon and germanium have four ...

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to `(E_g)_C, (E_g)_(Si), and (E_g)_(Ge)`. Which of the following statements is true?

A

`(E_(g))c gt (E_(g))Si`

B

`(E_(g))c = (E_(g))Si`

C

`(E_(g))c lt (E_(g))Ge`

D

`(E_(g))c lt (E_(g))Si`

Text Solution

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The correct Answer is:
A
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. Application of forward bias to p-n junction

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  2. Zener diode is used for:-

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  3. Carbon, silicon and germanium have four valence electrons each. These ...

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  4. Choose the false statement from the following.

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  5. Copper has face-centered cubic (fcc) lattice with interatomic spacing ...

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  6. The cations and anions are arranged n alternate form in:

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  7. In semiconductors at a room temperature

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  8. In good conductors of electricity the type of bonding that exist is

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  9. In an insulator, the forbidden energy gap between the valence band and...

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  10. In a p-n junction depletion region has a thickness of the order of

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  11. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  12. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  13. In the case of forward biasing of PN-junction, which one of the follow...

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  14. When arsenic is added as an impurity to silicon, the resulting materia...

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  15. To obtain a p-type germanium semiconductor, it must be doped with

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  16. The cause of the potential barrier in a p-n diode is

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  17. A semiconducting device is connected in a series in circuit with a bat...

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  18. p-n junction diode can be used as

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  19. In p-type semiconductor, the major charge carriers are:

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  20. In forward bias the width of depletion layer in a p-n junction diode

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