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To obtain a p-type germanium semiconduct...

To obtain a p-type germanium semiconductor, it must be doped with

A

Indium

B

Phosphorus

C

Aresenic

D

Antimony

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The correct Answer is:
A
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. In the case of forward biasing of PN-junction, which one of the follow...

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  2. When arsenic is added as an impurity to silicon, the resulting materia...

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  3. To obtain a p-type germanium semiconductor, it must be doped with

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  4. The cause of the potential barrier in a p-n diode is

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  5. A semiconducting device is connected in a series in circuit with a bat...

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  6. p-n junction diode can be used as

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  7. In p-type semiconductor, the major charge carriers are:

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  8. In forward bias the width of depletion layer in a p-n junction diode

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  9. Depletion layer consists of

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  10. In a junction diode, the holes are due to

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  11. In a PN junction : -

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  12. For the given circuit of P-N junction diode which is correct : -

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  13. Reverse bias applied to a junction diode

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  14. Barrier potential of a p-n junction diode does not depend on -

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  15. In a p–n junction photo cell, the value of the photo electromotive for...

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  16. In a zener diode, break down occurs in reverse bias due to

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  17. In a p-n junction, depletion region contains

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  18. In the given circuit , the value of current is

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  19. The diode used in the circuit shown in the figure has a constant volta...

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  20. The current in the circuit will be

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