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The cause of the potential barrier in a ...

The cause of the potential barrier in a p-n diode is

A

Depletion of negative charges near the junction

B

Concentration of positive charges near the junction

C

Depletion of positive charges near the junction

D

Concentration of positive and negative charges near the junction

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The correct Answer is:
D
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. When arsenic is added as an impurity to silicon, the resulting materia...

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  2. To obtain a p-type germanium semiconductor, it must be doped with

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  3. The cause of the potential barrier in a p-n diode is

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  4. A semiconducting device is connected in a series in circuit with a bat...

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  5. p-n junction diode can be used as

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  6. In p-type semiconductor, the major charge carriers are:

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  7. In forward bias the width of depletion layer in a p-n junction diode

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  8. Depletion layer consists of

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  9. In a junction diode, the holes are due to

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  10. In a PN junction : -

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  11. For the given circuit of P-N junction diode which is correct : -

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  12. Reverse bias applied to a junction diode

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  13. Barrier potential of a p-n junction diode does not depend on -

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  14. In a p–n junction photo cell, the value of the photo electromotive for...

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  15. In a zener diode, break down occurs in reverse bias due to

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  16. In a p-n junction, depletion region contains

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  17. In the given circuit , the value of current is

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  18. The diode used in the circuit shown in the figure has a constant volta...

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  19. The current in the circuit will be

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  20. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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