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Pure Si at 300 K has equal electron (ne)...

Pure Si at 300 K has equal electron `(n_e)` and hole `(n_(h))` concentration of `2.xx10^(16)` per `m^(3)`. Doping by indium increases `n_(h)` to `4xx10^(22) ` per `m^(3)`. Calculate `n_(e)` in the doped silicon.

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For a doped semi-conductor in thermal equilebrium `n_(e)h_(h)=n_(i)` (law of mass action)
`n_(theta)=(n_(i)^(2))/(h_(h))=((1.5xx10^(16))^(2))/(3xx10^(22))=7.5xx10^(9)m^(-3)`
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
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  2. When p-n junction diode is forward biased, then

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  3. When a n-p-n transistor is used as an amplifier, then

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  4. The electrical conductivity of a semiconductor increases when electrom...

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  5. In a common base amplifier the phase difference the input signal volta...

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  6. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  7. If the ratio of the concentration of electrons and that of holes in a ...

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  8. In a common base mode of a transition , the collector current is 5.48...

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  9. If the lattice constant of this semiconductor is decreased, then which...

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  10. The circuit has two oppositely connect ideal diodes in parallel. What ...

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  11. If in a p-n junction, a square input signal of 10 V is applied as show...

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  12. Carbon, silicon and germanium have four valence electrons each. At roo...

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  13. A working transistor with its three legs marked P, Q and R is tested u...

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  14. In the circuit below, A and B represent two inputs and C represents th...

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  15. The Fig shown input waveforms A and B to a logic gate. Draw the output...

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  16. A p -n junction (D) shown in the figure can act as a rectifier. An alt...

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  17. The output of an OR gate is connected to both the inputs of a NAND gat...

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  18. Truth table for system of four NAND gates as shown in figure is

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  19. The I - V characteristic of an LED is

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  20. The forward biased diode connection among the following is

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  21. Two identical P-N junctions, may be connected in series with a battery...

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