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Potential barrier developed in a junctio...

Potential barrier developed in a junction diode opposes the flow of

A

Minority carriers in both regions only

B

Majority carriers

C

Electrons in N-region

D

Holes in P-region

Text Solution

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The correct Answer is:
B
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
  1. Potential barrier developed in a junction diode opposes the flow of

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  2. When p-n junction diode is forward biased, then

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  3. When a n-p-n transistor is used as an amplifier, then

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  4. The electrical conductivity of a semiconductor increases when electrom...

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  5. In a common base amplifier the phase difference the input signal volta...

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  6. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  7. If the ratio of the concentration of electrons and that of holes in a ...

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  8. In a common base mode of a transition , the collector current is 5.48...

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  9. If the lattice constant of this semiconductor is decreased, then which...

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  10. The circuit has two oppositely connect ideal diodes in parallel. What ...

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  11. If in a p-n junction, a square input signal of 10 V is applied as show...

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  12. Carbon, silicon and germanium have four valence electrons each. At roo...

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  13. A working transistor with its three legs marked P, Q and R is tested u...

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  14. In the circuit below, A and B represent two inputs and C represents th...

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  15. The Fig shown input waveforms A and B to a logic gate. Draw the output...

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  16. A p -n junction (D) shown in the figure can act as a rectifier. An alt...

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  17. The output of an OR gate is connected to both the inputs of a NAND gat...

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  18. Truth table for system of four NAND gates as shown in figure is

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  19. The I - V characteristic of an LED is

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  20. The forward biased diode connection among the following is

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  21. Two identical P-N junctions, may be connected in series with a battery...

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