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An electric field us applied to a semico...

An electric field us applied to a semiconductor.Let the number of charge carriers be n and the average drift speed be v.If the temperature is increased,

A

both n and v will increase

B

n will increase but v will decrease

C

v will increases but n will decreases

D

both n and v will decrease

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The correct Answer is:
B
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. The free electron concentration (n) in the conduction band of a semico...

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  2. Electric conduction in a semiconductor takes place due to

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  3. An electric field us applied to a semiconductor.Let the number of char...

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  4. The mobility of free electrons is greater then that of free holes beca...

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  5. Lets npand ne be the number of holes and conduction electrons in an in...

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  6. The electrical conductivity of pure germanium can be increased by

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  7. n-type semiconductors are

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  8. Lets npand ne be the number of holes and conduction electrons in an ex...

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  9. A semiconductor is doped with a donor impurity

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  10. A p-type semoconductor has acceptor levels 57meV above the valence ban...

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  11. Which of the following energy bank diagram shows the N-type semiconduc...

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  12. A P-type sillicon semiconductor is made by adding one atom of indium p...

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  13. When n-type of semiconductor is heated

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  14. GaAs is-

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  15. What will be conductance of pure sillicon crystal at 300 K temp? if el...

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  16. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  17. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  18. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  19. Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration...

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  20. The length of a germanium rod is 0.58 cm and its area of cross-section...

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