Home
Class 12
PHYSICS
Lets npand ne be the number of holes and...

Lets `n_p`and `n_e` be the number of holes and conduction electrons in an intrinsic semiconductor.

A

`n_(p)gtn_(e)`

B

`n_(p)=n_(e)`

C

`n_(p) lt n_(e)`

D

`n_(p)nen_(e)`

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    RESONANCE ENGLISH|Exercise Exercise 2|16 Videos
  • SEMICONDUCTORS

    RESONANCE ENGLISH|Exercise Exercise 3|88 Videos
  • SEMICONDUCTORS

    RESONANCE ENGLISH|Exercise Exercise 3|88 Videos
  • REVISION DPP

    RESONANCE ENGLISH|Exercise All Questions|463 Videos
  • SIMPLE HARMONIC MOTION

    RESONANCE ENGLISH|Exercise Advanced Level Problems|13 Videos
RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. An electric field us applied to a semiconductor.Let the number of char...

    Text Solution

    |

  2. The mobility of free electrons is greater then that of free holes beca...

    Text Solution

    |

  3. Lets npand ne be the number of holes and conduction electrons in an in...

    Text Solution

    |

  4. The electrical conductivity of pure germanium can be increased by

    Text Solution

    |

  5. n-type semiconductors are

    Text Solution

    |

  6. Lets npand ne be the number of holes and conduction electrons in an ex...

    Text Solution

    |

  7. A semiconductor is doped with a donor impurity

    Text Solution

    |

  8. A p-type semoconductor has acceptor levels 57meV above the valence ban...

    Text Solution

    |

  9. Which of the following energy bank diagram shows the N-type semiconduc...

    Text Solution

    |

  10. A P-type sillicon semiconductor is made by adding one atom of indium p...

    Text Solution

    |

  11. When n-type of semiconductor is heated

    Text Solution

    |

  12. GaAs is-

    Text Solution

    |

  13. What will be conductance of pure sillicon crystal at 300 K temp? if el...

    Text Solution

    |

  14. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

    Text Solution

    |

  15. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

    Text Solution

    |

  16. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

    Text Solution

    |

  17. Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration...

    Text Solution

    |

  18. The length of a germanium rod is 0.58 cm and its area of cross-section...

    Text Solution

    |

  19. The contrinution in the total current flowing through a semiconductor ...

    Text Solution

    |

  20. p-n junction is

    Text Solution

    |