GaAs is-

A

an elemental semiconductor

B

a compound semiconductor

C

an insulator

D

a metallic semiconductor

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The correct Answer is:
To determine the classification of gallium arsenide (GaAs), we can follow these steps: ### Step 1: Identify the Composition of GaAs Gallium arsenide is composed of two elements: gallium (Ga) and arsenic (As). ### Step 2: Determine the Nature of the Elements Gallium is a metal, while arsenic is a metalloid. When combined, they form a compound. ### Step 3: Classify GaAs Since GaAs is formed from two different elements, it is classified as a compound. ### Step 4: Analyze Semiconductor Properties GaAs exhibits semiconductor behavior. This is due to its ability to conduct electricity under certain conditions, which is a characteristic of semiconductors. ### Step 5: Conclusion Based on the above analysis, gallium arsenide is classified as a compound semiconductor. ### Final Answer Gallium arsenide (GaAs) is a compound semiconductor. ---
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
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  2. When n-type of semiconductor is heated

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  3. GaAs is-

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  4. What will be conductance of pure sillicon crystal at 300 K temp? if el...

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  5. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  6. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  7. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  8. Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration...

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  9. The length of a germanium rod is 0.58 cm and its area of cross-section...

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  10. The contrinution in the total current flowing through a semiconductor ...

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  11. p-n junction is

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  12. Diffusion current in a p-n junction is greater than the drift current ...

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  13. In a p-n junction diode, change in temperature due to heating

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  14. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  15. The depletion region of a P-N diode, under open circuit condition cont...

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  16. Which is the wrong statement in following sentence? A device in which ...

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  17. The depletion layer in the p-n junction region is caused by

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  18. The contact potential at the junction site in a P-N junction is-

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  19. When value of current increase in P-N junction, then the value of cont...

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  20. The dominant mechanism for motion of charge carriers in forward and re...

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