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Mobility of electron in N-type Ge is 500...

Mobility of electron in N-type Ge is `5000 cm^(2)//"volt"` sec and conductivity `5 "mho/cm"`. If effect of holes is negligible then impurity concentration will be

A

`6.25xx10^(15)//cm^(3)`

B

`9.25xx10^(14)//cm^(3)`

C

`6xx10^(13)//cm^(3)`

D

`9xx10^(13)//cm^(3)`

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The correct Answer is:
To find the impurity concentration in N-type germanium given the mobility of electrons and conductivity, we can use the formula for conductivity: \[ \sigma = n_e \cdot e \cdot \mu_e \] Where: - \(\sigma\) is the conductivity (in mho/cm), - \(n_e\) is the electron concentration (in cm\(^{-3}\)), - \(e\) is the charge of an electron (\(1.6 \times 10^{-19}\) coulombs), - \(\mu_e\) is the mobility of electrons (in cm\(^2\)/(volt·sec)). ### Step-by-Step Solution: 1. **Identify the given values**: - Mobility of electrons, \(\mu_e = 5000 \, \text{cm}^2/\text{volt sec}\) - Conductivity, \(\sigma = 5 \, \text{mho/cm}\) - Charge of an electron, \(e = 1.6 \times 10^{-19} \, \text{C}\) 2. **Rearrange the formula for conductivity to solve for electron concentration \(n_e\)**: \[ n_e = \frac{\sigma}{e \cdot \mu_e} \] 3. **Substitute the known values into the equation**: \[ n_e = \frac{5 \, \text{mho/cm}}{(1.6 \times 10^{-19} \, \text{C}) \cdot (5000 \, \text{cm}^2/\text{volt sec})} \] 4. **Calculate the denominator**: \[ e \cdot \mu_e = 1.6 \times 10^{-19} \times 5000 = 8.0 \times 10^{-16} \, \text{C cm}^2/\text{volt sec} \] 5. **Now calculate \(n_e\)**: \[ n_e = \frac{5}{8.0 \times 10^{-16}} = 6.25 \times 10^{15} \, \text{cm}^{-3} \] 6. **Conclusion**: The impurity concentration \(n_e\) in N-type germanium is \(6.25 \times 10^{15} \, \text{cm}^{-3}\). ### Final Answer: The impurity concentration is \(6.25 \times 10^{15} \, \text{cm}^{-3}\). ---
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
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  2. Forbidden energy gap of Ge is 0.75eV, maximum wave length of incident ...

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  3. Mobility of electron in N-type Ge is 5000 cm^(2)//"volt" sec and condu...

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  4. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  5. Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration...

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  6. The length of a germanium rod is 0.58 cm and its area of cross-section...

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  7. The contrinution in the total current flowing through a semiconductor ...

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  8. p-n junction is

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  9. Diffusion current in a p-n junction is greater than the drift current ...

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  10. In a p-n junction diode, change in temperature due to heating

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  11. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  12. The depletion region of a P-N diode, under open circuit condition cont...

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  13. Which is the wrong statement in following sentence? A device in which ...

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  14. The depletion layer in the p-n junction region is caused by

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  15. The contact potential at the junction site in a P-N junction is-

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  16. When value of current increase in P-N junction, then the value of cont...

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  17. The dominant mechanism for motion of charge carriers in forward and re...

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  18. The barrier potential in a P-N junction is maximum in

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  19. The diffusion current in a p-n junction is

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  20. The drift current in a p-n junction is

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