Pure Si at 300 K has equal electron `(n_e)` and hole `(n_(h))` concentration of `2.xx10^(16)` per `m^(3)`. Doping by indium increases `n_(h)` to `4xx10^(22) ` per `m^(3)`. Calculate `n_(e)` in the doped silicon.

Options

A. `5.0xx10^(9)m^(-3)`
B. `6.0xx10^(6)m^(-3)`
C. `7.0xx10^(3)m^(-3)`
D. `4.0xx10^(9)m^(-3)`

Answer

A