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Diffusion current in a p-n junction is g...

Diffusion current in a p-n junction is greater than the drift current in magnitude

A

if the junction is forward-biased

B

if the junction is reverse-biased

C

if the junction is unbiased

D

in no case

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The correct Answer is:
To solve the question regarding the diffusion current in a p-n junction being greater than the drift current in magnitude, we can follow these steps: ### Step 1: Understand the p-n Junction A p-n junction consists of two types of semiconductor materials: p-type (which has an abundance of holes) and n-type (which has an abundance of electrons). When these two materials are joined, they form a junction where charge carriers (holes and electrons) interact. **Hint:** Recall the basic structure of a p-n junction and the types of charge carriers present. ### Step 2: Identify the Types of Currents In a p-n junction, there are two types of currents: - **Diffusion Current:** This occurs due to the movement of charge carriers (holes and electrons) from regions of high concentration to low concentration. In a p-n junction, holes will diffuse from the p-side to the n-side and electrons will diffuse from the n-side to the p-side. - **Drift Current:** This occurs due to the movement of charge carriers in an electric field. In a p-n junction, the built-in electric field created by the potential barrier causes the charge carriers to drift. **Hint:** Differentiate between diffusion and drift currents based on their causes. ### Step 3: Analyze Forward Biasing When a p-n junction is forward biased (the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal), the potential barrier is reduced. This allows more charge carriers to move across the junction: - The concentration of holes in the p-side increases. - The concentration of electrons in the n-side increases. As a result, the diffusion current increases significantly because more charge carriers are available to diffuse across the junction. **Hint:** Consider how applying a forward bias affects the charge carrier concentrations on both sides of the junction. ### Step 4: Compare the Magnitudes of Currents In the forward-biased condition, the increase in the number of charge carriers leads to a greater diffusion current compared to the drift current. The drift current remains relatively constant because it is primarily dependent on the electric field, which does not change significantly with forward bias. **Hint:** Think about how the increase in charge carriers due to forward bias influences the diffusion current. ### Conclusion Thus, the diffusion current in a p-n junction is greater than the drift current in magnitude when the junction is forward biased. **Final Answer:** The diffusion current in a p-n junction is greater than the drift current in magnitude when the junction is forward biased.
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. The contrinution in the total current flowing through a semiconductor ...

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  2. p-n junction is

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  3. Diffusion current in a p-n junction is greater than the drift current ...

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  4. In a p-n junction diode, change in temperature due to heating

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  5. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  6. The depletion region of a P-N diode, under open circuit condition cont...

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  7. Which is the wrong statement in following sentence? A device in which ...

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  8. The depletion layer in the p-n junction region is caused by

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  9. The contact potential at the junction site in a P-N junction is-

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  10. When value of current increase in P-N junction, then the value of cont...

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  11. The dominant mechanism for motion of charge carriers in forward and re...

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  12. The barrier potential in a P-N junction is maximum in

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  13. The diffusion current in a p-n junction is

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  14. The drift current in a p-n junction is

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  15. For a reverse bias P-N junction-

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  16. Druing P-N junction formation when the electron and holes stops moving...

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  17. The value of barrier potential of P-N juntion in Ge is-

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  18. Region without free electrons and holes in a p-n junction is

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  19. One part of a device is connected with the negative terminal of a batt...

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  20. Potential barrier developed in a junction diode opposes the flow of

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