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The depletion region of a P-N diode, und...

The depletion region of a P-N diode, under open circuit condition contains

A

Electrons

B

Holes

C

Unmasked immobile impurity ions

D

Impurity atoms

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The correct Answer is:
To solve the question regarding the depletion region of a P-N diode under open circuit conditions, let's break it down step by step. ### Step 1: Understand the Structure of a P-N Junction A P-N junction diode consists of two regions: the P-type region, which has an abundance of holes (positive charge carriers), and the N-type region, which has an abundance of electrons (negative charge carriers). **Hint:** Remember that P-type has holes and N-type has electrons. ### Step 2: Identify Charge Carriers in Each Region In the P-type region, the charge carriers are holes, which are created by doping the semiconductor with acceptor impurities. In the N-type region, the charge carriers are electrons, created by doping with donor impurities. **Hint:** P-type = holes (positive), N-type = electrons (negative). ### Step 3: Understand the Depletion Region When the P-N junction is formed, electrons from the N-region diffuse into the P-region and recombine with holes. Similarly, holes from the P-region diffuse into the N-region and recombine with electrons. This recombination leads to the formation of a depletion region, which is devoid of free charge carriers. **Hint:** Recombination of charge carriers leads to the depletion of mobile charges. ### Step 4: Analyze the Composition of the Depletion Region In the depletion region, only immobile ions remain. In the P-region, the immobile positive ions (from the acceptor atoms) are left behind after the holes have recombined. In the N-region, the immobile negative ions (from the donor atoms) remain after the electrons have recombined. **Hint:** The depletion region contains immobile ions, not free charge carriers. ### Step 5: Conclusion Under open circuit conditions, the depletion region of a P-N diode contains unmasked immobile impurity ions. These ions are the result of the doping process that created the P-type and N-type materials. **Final Answer:** The depletion region of a P-N diode under open circuit conditions contains unmasked immobile impurity ions.
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. In a p-n junction diode, change in temperature due to heating

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  2. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  3. The depletion region of a P-N diode, under open circuit condition cont...

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  4. Which is the wrong statement in following sentence? A device in which ...

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  5. The depletion layer in the p-n junction region is caused by

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  6. The contact potential at the junction site in a P-N junction is-

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  7. When value of current increase in P-N junction, then the value of cont...

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  8. The dominant mechanism for motion of charge carriers in forward and re...

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  9. The barrier potential in a P-N junction is maximum in

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  10. The diffusion current in a p-n junction is

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  11. The drift current in a p-n junction is

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  12. For a reverse bias P-N junction-

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  13. Druing P-N junction formation when the electron and holes stops moving...

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  14. The value of barrier potential of P-N juntion in Ge is-

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  15. Region without free electrons and holes in a p-n junction is

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  16. One part of a device is connected with the negative terminal of a batt...

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  17. Potential barrier developed in a junction diode opposes the flow of

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  18. PN-junction diode works as a insulator, if connected

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  19. If the forward voltage in a diode is increased, the width of the deple...

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  20. The resistance of a reverse baised P-N junction diode is about-

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