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Which is the wrong statement in followin...

Which is the wrong statement in following sentence? A device in which P and N type semiconductors are used is more useful then a vacuum tube because-

A

power is not necessary to heat the filament

B

it is more stable

C

very less heat is producted in it

D

its efficiency is high due to a high voltage drop across the junction.

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AI Generated Solution

The correct Answer is:
To determine the wrong statement in the given sentence about the usefulness of devices using P and N type semiconductors compared to vacuum tubes, let's analyze each statement step by step. ### Step-by-Step Solution: 1. **Understanding the Context**: - We are comparing devices that utilize P-N junctions (semiconductors) with vacuum tubes. - We need to identify which statement about the advantages of semiconductors is incorrect. 2. **Statement Analysis**: - **Statement 1**: "Power is not necessary to heat the filaments." - **Analysis**: This statement is true. Semiconductors do not require filaments to operate, unlike vacuum tubes which need power to heat filaments. - **Statement 2**: "It is more stable." - **Analysis**: This statement is also true. P-N junctions are generally more stable than vacuum tubes, which can be sensitive to temperature and other conditions. - **Statement 3**: "Very less heat is produced in it." - **Analysis**: This statement is true. Semiconductors produce significantly less heat compared to vacuum tubes, which dissipate a lot of heat due to the filaments. - **Statement 4**: "Its efficiency is high due to the high voltage drop across the junction." - **Analysis**: This statement is incorrect. While semiconductors can be efficient, the efficiency is not primarily due to a high voltage drop across the junction. In fact, a high voltage drop can lead to power losses, and semiconductors are designed to operate efficiently at lower voltage drops. 3. **Conclusion**: - The wrong statement is: "Its efficiency is high due to the high voltage drop across the junction." ### Final Answer: The wrong statement is: "Its efficiency is high due to the high voltage drop across the junction." ---
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  2. The depletion region of a P-N diode, under open circuit condition cont...

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  3. Which is the wrong statement in following sentence? A device in which ...

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  4. The depletion layer in the p-n junction region is caused by

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  5. The contact potential at the junction site in a P-N junction is-

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  6. When value of current increase in P-N junction, then the value of cont...

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  7. The dominant mechanism for motion of charge carriers in forward and re...

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  8. The barrier potential in a P-N junction is maximum in

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  9. The diffusion current in a p-n junction is

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  10. The drift current in a p-n junction is

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  11. For a reverse bias P-N junction-

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  12. Druing P-N junction formation when the electron and holes stops moving...

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  13. The value of barrier potential of P-N juntion in Ge is-

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  14. Region without free electrons and holes in a p-n junction is

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  15. One part of a device is connected with the negative terminal of a batt...

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  16. Potential barrier developed in a junction diode opposes the flow of

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  17. PN-junction diode works as a insulator, if connected

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  18. If the forward voltage in a diode is increased, the width of the deple...

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  19. The resistance of a reverse baised P-N junction diode is about-

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  20. In which case is the junction diode is not reverse bias-

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