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The depletion layer in the p-n junction ...

The depletion layer in the p-n junction region is caused by

A

drift of holes

B

diffusion of free charge carries

C

migration of impurity ions

D

drift of electrons

Text Solution

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The correct Answer is:
B
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. The depletion region of a P-N diode, under open circuit condition cont...

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  2. Which is the wrong statement in following sentence? A device in which ...

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  3. The depletion layer in the p-n junction region is caused by

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  4. The contact potential at the junction site in a P-N junction is-

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  5. When value of current increase in P-N junction, then the value of cont...

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  6. The dominant mechanism for motion of charge carriers in forward and re...

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  7. The barrier potential in a P-N junction is maximum in

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  8. The diffusion current in a p-n junction is

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  9. The drift current in a p-n junction is

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  10. For a reverse bias P-N junction-

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  11. Druing P-N junction formation when the electron and holes stops moving...

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  12. The value of barrier potential of P-N juntion in Ge is-

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  13. Region without free electrons and holes in a p-n junction is

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  14. One part of a device is connected with the negative terminal of a batt...

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  15. Potential barrier developed in a junction diode opposes the flow of

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  16. PN-junction diode works as a insulator, if connected

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  17. If the forward voltage in a diode is increased, the width of the deple...

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  18. The resistance of a reverse baised P-N junction diode is about-

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  19. In which case is the junction diode is not reverse bias-

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  20. If V(A) and V(B) denote the potentials of A and B, then the equivalent...

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