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The dominant mechanism for motion of cha...

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are

A

drift in both reverse and forward bias

B

drift in forward bias and diffusion in reverse bias

C

drift in reverse bias and diffusion in forward bias

D

diffution in both forward and reverse bias

Text Solution

Verified by Experts

The correct Answer is:
C
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. The contact potential at the junction site in a P-N junction is-

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  2. When value of current increase in P-N junction, then the value of cont...

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  3. The dominant mechanism for motion of charge carriers in forward and re...

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  4. The barrier potential in a P-N junction is maximum in

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  5. The diffusion current in a p-n junction is

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  6. The drift current in a p-n junction is

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  7. For a reverse bias P-N junction-

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  8. Druing P-N junction formation when the electron and holes stops moving...

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  9. The value of barrier potential of P-N juntion in Ge is-

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  10. Region without free electrons and holes in a p-n junction is

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  11. One part of a device is connected with the negative terminal of a batt...

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  12. Potential barrier developed in a junction diode opposes the flow of

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  13. PN-junction diode works as a insulator, if connected

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  14. If the forward voltage in a diode is increased, the width of the deple...

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  15. The resistance of a reverse baised P-N junction diode is about-

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  16. In which case is the junction diode is not reverse bias-

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  17. If V(A) and V(B) denote the potentials of A and B, then the equivalent...

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  18. Avalanche breakdown is due to

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  19. If the two ends of a p-n junction are joined by a wire .

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  20. Symbolic representation of photodiode is

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