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Potential barrier developed in a junctio...

Potential barrier developed in a junction diode opposes the flow of

A

minority carriers in both regions only

B

Majority carriers

C

Electrons in N-region

D

Holes in P-Region

Text Solution

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The correct Answer is:
B
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
  1. Region without free electrons and holes in a p-n junction is

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  2. One part of a device is connected with the negative terminal of a batt...

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  3. Potential barrier developed in a junction diode opposes the flow of

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  4. PN-junction diode works as a insulator, if connected

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  5. If the forward voltage in a diode is increased, the width of the deple...

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  6. The resistance of a reverse baised P-N junction diode is about-

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  7. In which case is the junction diode is not reverse bias-

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  8. If V(A) and V(B) denote the potentials of A and B, then the equivalent...

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  9. Avalanche breakdown is due to

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  10. If the two ends of a p-n junction are joined by a wire .

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  11. Symbolic representation of photodiode is

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  12. Symbol of zener diode-

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  13. Consider the following statements A and B and identify the correct ans...

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  14. Two junction diodes one of germanium (Ge) and other of sillicon (Si) a...

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  15. In a photodiode,the conductivity increases when the material is expose...

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  16. If the forward voltage in a semiconductor diode is chaged form 0.5 V t...

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  17. When the reverse potential in a semiconductor diode are 10 V and 30 V,...

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  18. If the frequency of input alternating potential in n, then the ripple ...

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  19. The current flowing through the zener diode in fig is-

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  20. Functions of a rectifier is

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