Home
Class 12
PHYSICS
Carbon, silicon and germanium have four ...

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to `(E_g)_C, (E_g)_(Si), and (E_g)_(Ge)`. Which of the following statements is true?

A

`(E_(g))_(C)lt(E_(g))_(ge)`

B

`(E_(g))_(c)gt(E_(g))_(si)`

C

`(E_(g))_(c)=(E_(g))_(si)`

D

`(E_(g))_(c)lt(E_(g))_(si)`

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTORS

    RESONANCE ENGLISH|Exercise Exercise 2|16 Videos
  • REVISION DPP

    RESONANCE ENGLISH|Exercise All Questions|463 Videos
  • SIMPLE HARMONIC MOTION

    RESONANCE ENGLISH|Exercise Advanced Level Problems|13 Videos

Similar Questions

Explore conceptually related problems

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to (E_g)_(c) (E_g)_(si) and (E_g)_(Ge) . Which of the following statements ture ?

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to (E_g)_(c) (E_g)_(si) and (E_g)_(Ge) . Which of the following statements ture ?

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to (E_g)_(c) (E_g)_(si) and (E_g)_(Ge) . Which of the following statements ture ?

Carbon , silicon and germanium have four valence electrons each . At room temperature which one of the following statements is most appropriate ?

Carbon , silicon and germanium have four valence electrons each . At room temperature which one of the following statements is most appropriate ?

Let g(x)=int_0^(e^x) (f\'(t)dt)/(1+t^2) . Which of the following is true?

The energy gaps (E_(g)) between valence band and conduction band for diamond, silicon and germanium are in the order

The band gap of an insulator, conductor and semiconductor are respectively E_(g1) and E_(g2) and E_(g3). The relationship between them is given as______.

Which of the following equations correctly represents the temperature variation of energy gap between the conduction and valence bands for Si?

The free electron concentration (n) in the conduction band of a semiconductor at a temperature T kelvin is described in terms of E_(g) and T as-

RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
  1. The output of OR gate is 1 :-

    Text Solution

    |

  2. Zener diode is used as

    Text Solution

    |

  3. Carbon, silicon and germanium have four valence electrons each. These ...

    Text Solution

    |

  4. Application of forward bias to p-n junction

    Text Solution

    |

  5. A transistor -oscillator using a resonant circuit with an inductor L (...

    Text Solution

    |

  6. A transistor is operated in common emitter configuration at constant c...

    Text Solution

    |

  7. A forward biased diode is

    Text Solution

    |

  8. A photocell employs photoelectric effect to convert.

    Text Solution

    |

  9. The radius of germanium (Ge) nuclide is measured to be twice the radiu...

    Text Solution

    |

  10. The energy gap of silicon is 1.14 eV . What is the maximum wavelength ...

    Text Solution

    |

  11. In the following circuit, the output Y for all possible inputs A and B...

    Text Solution

    |

  12. In the energy band diagram of a material shown below, the open circles...

    Text Solution

    |

  13. A common emiiter amplifier has voltage gain 50 and current gain is 25....

    Text Solution

    |

  14. Draw the truth table for the logic gate arrangement shown in the figur...

    Text Solution

    |

  15. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  16. The circuit is equivalent to

    Text Solution

    |

  17. (a) For given transistor circuit, the base current is 10muA and the co...

    Text Solution

    |

  18. A p-n Photodiode is fabricated from a semiconductor with a band gap of...

    Text Solution

    |

  19. The symbolic representation of four logic gates (i) The logic sym...

    Text Solution

    |

  20. (a) Draw the circuit diagram of reversed bias p-n junction. (b). Dra...

    Text Solution

    |