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A p-n photodiode is made of a material w...

A p-n photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A

`10xx10^(14)Hz`

B

`5xx10^(14)Hz`

C

`1xx10^(14)Hz`

D

`20xx10^(14)Hz`

Text Solution

Verified by Experts

The correct Answer is:
B

p-n photodiode is a semiconductor diode that produces a significant current when illuminated. It is reversed biased but is operated below the breakdown voltage.
Energy of radiation `=` band gap energy
ie., `hv=2.0eV`
or `v=(2.0xx1.6xx10^(-19))/(6.6xx10^(-34))approx5xx10^(14)Hz`
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
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  2. Draw the truth table for the logic gate arrangement shown in the figur...

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  3. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  4. The circuit is equivalent to

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  5. (a) For given transistor circuit, the base current is 10muA and the co...

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  6. A p-n Photodiode is fabricated from a semiconductor with a band gap of...

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  7. The symbolic representation of four logic gates (i) The logic sym...

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  8. (a) Draw the circuit diagram of reversed bias p-n junction. (b). Dra...

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  9. Which one of the following statement is false?

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  10. The device that can act as a complete electronic circuit is

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  11. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  12. To get an output 1 from the circuit shown in figure the input must be ...

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  13. In the following figure, the diodes which are forwards biased are :

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  14. Pure Si at 500 K has equal number of electron (n(e)) and hole (n(h)) c...

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  15. A zener diode having breakdown voltage equal to 15V, is used in a volt...

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  16. A transistor is operated in common-emitter configuration at V(c) = 2 v...

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  17. In forward biasing of the p-n junction

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  18. If a small amount of antimony is added to germanium crystal

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  19. Value of forbidden energy gap for semi conductor is:

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  20. Ga As is a/an:

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