Pure Si at 500 K has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16) m^(-3)`. Doping by indium increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of :

Options

A. n-type with electron concentration `n_(e)=5xx10^(22)m^(-3)`
B. p-type with electron concentration `n_(e)=2.5xx10^(10)m^(-3)`
C. n-type with electron concentration `n_(e)=2.5xx10^(23)m^(-3)`
D. p-type having electron concentrations `n_(e)=5xx10^(9)m^(-3)`

Answer

D

Explanation

`n_(1)^(2)=n_(e)n_(h)`
`(1.5xx10^(16))^(2)n_(e)(4.5xx10^(22))`
`n_(e)=0.5xx10^(10)`
`n_(e)=5xx10^(9)`
`n_(h)=4.5xx10^(22)`
`n_(h)gtgtn_(e)`
Semiconductor is p-type and `n_(e)=5xx10^(9)m^(-3)`