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The number of free electrons is Si at no...

The number of free electrons is Si at normal temperature is

A

`2.5xx10^(6) "per cm"^(3)`

B

`1.5xx10^(10) "per cm"^(3)`

C

`1.5xx10^(13) "per cm"^(3)`

D

`2.5xx10^(13) "per cm"^(3)`

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The correct Answer is:
B
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In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. A uniform wire of length 2.0 m and cross-sectional area 10^(-7) m^(2) carries a current of 1.6 A. If there are 10^(28) free electrons per m in copper, the drift speed of electrons in copper is

In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. A current of 1 A flows through a copper wire. The number of electrons passing through any cross-section of the wire in 1.6 sec is (charge of a electron = 1.6 xx 10^(-19 c) .

In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. The drift speed of free electrons in a conductor depends upon

In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. If no potential difference is maintained between the ends of a conductor

In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. Choose the current statements

In a metal in the solid state, such as a copper wire, the atoms are strongly bound to one another and occupý fixed positions. Some electrons (called the conductor electrons) are free to move in the body of the metal while the other are strongly bound to their atoms. In good conductors, the number of free electrons is very large of the order of 10^(28) electrons per cubic metre in copper. The free electrons are in random motion and keep colliding with atoms. At room temperature, they move with velocities of the order of 10^5 m/s. These velocities are completely random and there is not net flow of charge in any directions. If a potential difference is maintained between the ends of the metal wire (by connecting it across a battery), an electric field is set up which accelerates the free electrons: These accelerated electrons frequently collide with the atoms of the conductor, as a result, they acquire a constant speed called the drift speed which is given by V_e = 1/enA where I = current in the conductor due to drifting electrons, e = charge of electron, n = number of free electrons per unit volume of the conductor and A = area of cross-section of the conductor. A constant potential difference is maintained between the ends of a conductor having nonuniform cross-section. Which of the following quantities will not change along the length of the conductor

Thermal speed v of free electrons in a conductor at absolute temperaure T is proportional to

RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
  1. Value of forbidden energy gap for semi conductor is:

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  2. Ga As is a/an:

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  3. The number of free electrons is Si at normal temperature is

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  4. Regarding a semiconductor which one of the following statements is wro...

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  5. For making p-n junction diode forward biased:

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  6. In good conductors of electricity the type of bonding that exist is

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  7. Which of the following statements is true for an n-type semi-comductor...

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  8. A light-emitting diode (LED) has a voltage drop of 2V across it and pa...

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  9. The minimum potential difference between the base and emitter required...

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  10. A p-n junction diode is reverse biased. Then

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  11. The difference in the variation of resistance with temperature in a me...

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  12. If the input is given between A and C, thent he output at the ends of ...

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  13. The majority charge carriers in P-type semiconductore are

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  14. Wires P and Q have the same resistance at ordinary (room) temperature....

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  15. Two ideal diodes are connected to a battery as shown in the circuit. T...

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  16. For a CE-transistor amplifier, the audio signal voltage across the ...

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  17. C and Si both have same lattice structure, having 4 bonding electrons ...

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  18. Transfer characteristic [output voltage (V(0)) vs input voltage (V(i))...

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  19. The figure shows a logic circuit with two inputs A and B and the outpu...

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  20. The input resistance of a silicon transistor is 100 Omega. Base curre...

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