For making p-n junction diode forward biased:

Options

A. same potential is applied
B. greater potential is given to n compared to p
C. greater potential is given to p compared to n
D. unbalanced concentration

Explanation

To solve the question regarding the conditions for making a p-n junction diode forward biased, we can follow these steps:

### Step-by-Step Solution:

1. **Understanding the P-N Junction**:
- A p-n junction diode consists of two types of semiconductor materials: p-type (which has an abundance of holes) and n-type (which has an abundance of electrons).

2. **Identifying Forward Bias**:
- Forward bias occurs when the p-type side is connected to the positive terminal of a power supply and the n-type side is connected to the negative terminal. This arrangement allows current to flow through the diode.

3. **Analyzing the Potential**:
- In forward bias, the potential at the p-type side (let's call it point A) must be greater than the potential at the n-type side (let's call it point B). This is because the positive terminal of the battery repels holes in the p-type material towards the junction and attracts electrons from the n-type material.

4. **Conclusion**:
- Therefore, for a p-n junction diode to be forward biased, the potential at the p-side (A) must be greater than the potential at the n-side (B). This can be summarized as:
- **Potential at A > Potential at B**.

5. **Final Answer**:
- The correct statement is: "Greater potential is given to the P side compared to the N side."