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The difference in the variation of resis...

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

A

crystal structure

B

change in the number of charge career

C

type of bonding

D

none of these

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The correct Answer is:
To solve the question regarding the difference in the variation of resistance with temperature in metals and semiconductors, we can break it down step by step. ### Step 1: Understand the Concept of Resistance Resistance in a material is influenced by the movement of charge carriers (electrons in metals and holes/electrons in semiconductors). As temperature changes, the behavior of these charge carriers also changes. **Hint:** Recall that resistance is related to how easily charge carriers can move through a material. ### Step 2: Analyze Metals In metals, as the temperature increases, the lattice structure of the metal atoms vibrates more vigorously. This increased vibration leads to more frequent collisions between the charge carriers (electrons) and the vibrating atoms, which results in an increase in resistance. **Hint:** Think about how increased atomic vibrations affect electron movement in metals. ### Step 3: Analyze Semiconductors In semiconductors, the situation is different. As temperature increases, more electrons gain enough energy to jump from the valence band to the conduction band, thereby increasing the number of charge carriers (both electrons and holes). This increase in charge carriers leads to a decrease in resistance. **Hint:** Consider how the energy levels in semiconductors allow for more charge carriers at higher temperatures. ### Step 4: Compare the Two The key difference in the variation of resistance with temperature between metals and semiconductors is due to the change in the number of charge carriers. In metals, resistance increases with temperature due to increased collisions. In semiconductors, resistance decreases with temperature due to an increase in the number of charge carriers. **Hint:** Focus on how the behavior of charge carriers in both materials changes with temperature. ### Step 5: Conclusion Thus, the difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the change in the number of charge carriers with temperature. ### Final Answer The answer is: **Change in the number of charge carriers.** ---
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise 3
  1. Ga As is a/an:

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  2. The number of free electrons is Si at normal temperature is

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  3. Regarding a semiconductor which one of the following statements is wro...

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  4. For making p-n junction diode forward biased:

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  5. In good conductors of electricity the type of bonding that exist is

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  6. Which of the following statements is true for an n-type semi-comductor...

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  7. A light-emitting diode (LED) has a voltage drop of 2V across it and pa...

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  8. The minimum potential difference between the base and emitter required...

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  9. A p-n junction diode is reverse biased. Then

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  10. The difference in the variation of resistance with temperature in a me...

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  11. If the input is given between A and C, thent he output at the ends of ...

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  12. The majority charge carriers in P-type semiconductore are

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  13. Wires P and Q have the same resistance at ordinary (room) temperature....

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  14. Two ideal diodes are connected to a battery as shown in the circuit. T...

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  15. For a CE-transistor amplifier, the audio signal voltage across the ...

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  16. C and Si both have same lattice structure, having 4 bonding electrons ...

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  17. Transfer characteristic [output voltage (V(0)) vs input voltage (V(i))...

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  18. The figure shows a logic circuit with two inputs A and B and the outpu...

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  19. The input resistance of a silicon transistor is 100 Omega. Base curre...

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  20. To get an output Y=1 in given circuit which of the following input wil...

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