Determine the current through a silicon ...

Determine the current through a silicon diode of (barrier potential = 0.7V Fig Assume that the diode resistance is negligible.

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0.93 mA

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In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

Barrier potential of a p-n junction diode does not depend on

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