Home
Class 12
PHYSICS
Calculate the conductivity of pure silic...

Calculate the conductivity of pure silicon at room temperature where the concentration of carriers is `1.6 xx 10^(16)//m^(3)` . Assume the mobility of electrons and holes to be 0.15 and 0.05 `m^(2)V^(-1)s^(-1)`.

Text Solution

AI Generated Solution

To calculate the conductivity of pure silicon at room temperature, we will follow these steps: ### Step 1: Understand the Formula for Conductivity The conductivity (\( \sigma \)) of a semiconductor can be calculated using the formula: \[ \sigma = e \cdot (n_e \cdot \mu_e + n_h \cdot \mu_h) \] where: ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXAMPLES|56 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )|41 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise Problems (LEVEL-I)|35 Videos
  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos
  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

What is the conductivity of a semiconductor sample having electron concentration of 5 xx 10^(18) m^(-3) hole concentration of 5 xx 10^(19) m^(-3) , electron mobility of 2.0 m^(2) V^(-1) s^(-1) and hole mobility of 0.01 m^(2) V^(-1) s^(-1)? (Take charge of electron as 1.6 xx 10^(-19)C)

What is the conductivity of a semiconductor sample having electron concentration of 5 xx 10^(18) m^(-3) hole concentration of 5 xx 10^(19) m^(-3) , electron mobility of 2.0 m^(2) V^(-1) s^(-1) and hole mobility of 0.01 m^(2) V^(-1) s^(-1)? (Take charge of electron as 1.6 xx 10^(-19)C)

A potential difference of 2.5 V is applied across the faces of a germanium crystal plate. The face area of the crystal is 1 cm^(2) and its thickness is 1.0 mm . The free electron concentration in germanium is 2 xx 10^(19)m^(-3) and the electron and holes mobilities are 0.33m^(2)/V s and 0.17 m^(2)/V s respectively. The current across the plate will be

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

A block of pure silicon at 300 K has a length of 10 cm and an area of 1.0 cm^(2) . A battery of emf 2V is connected across it. The mobility of electron is 0.14 m^(2) v^(-1) S^(-1) and their number density is 1.5 xx 10^(16) m^(-3) . The mobility of holes is 0.05 m^(2) v^(-1) S^(-1) . The electron current is

Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 1.0xx10^(-7)m^(2) carrying a current of 1.5xx10^(-19) A. Assume the density of conduction electrons to be 9xx10^(28)m^(-3) .

The conductivity of a 0.01 M solution of acetic acid at 298 k is 1.65xx10^(-4) S cm ^(-1) . Calculate molar conductivity (wedge_(m)) of the solution.

The conductivity of a 0.01 M solution of acetic acid at 298 k is 1.65xx10^(-4) S cm ^(-1) . Calculate molar conductivity (wedge_(m)) of the solution.

Calculate the pH of 1.0xx10^(3) M solution of NaCI