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Pure Si at 300 K has equal electron (n(e...

Pure `Si` at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5 xx 10^(18) m^(-3)`. Doping by indium increases `n_(h)` to `4.5 xx 10^(22) m^(-3)`. Calculate `n_(e)` in the dipoed `Si`.

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Here `n_(i)=1.5xx10^(16)m^(-3),n_(h)=4.5xx10^(22)m^(-3)`
But `n_(e)n_(h)=n_(i)^(2)`
`therefore n_(e)=(n_(i)^(2))/(n_(h))=((1.5xx10^(16))^(2))/(4.5xx10^(22))=5xx10^(9)m^(-3)`
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