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Suppose a pure Si crystal has 5 × 10^(28...

Suppose a pure Si crystal has `5 × 10^(28)` atoms `m^(–3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that `n_(i) =1.5 × 10^(16) m^(–3)`.

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Note that thermally generated electrons `(n_(i)~10^(16)m^(-3))` are negligibly small as compared to those produced by doping .
Therefore, `n_(e)~~N_(D)`. Since `n_(e)n_(h)=n_(i)^(2)`,
`n_(e)=(5xx10^(28))/(10^(6))=5xx10^(22)` The number of holes
`n_(h)=(2.25xx10^(32))//(5xx10^(22))~4.5xx10^(9)m^(-3)`
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