Home
Class 12
PHYSICS
A potential barrier of 0.50V exists acro...

A potential barrier of 0.50V exists across a p-n junction.(a) If the depletion region is `5.0xx10^(-7)`m wide,what is the intensity of the electric field in this region?(b) An electron with speed`5.0xx10^(5)m s^(-1)`approaches the p-n junction form the n-side.With what speed will it enter the p-side?

Text Solution

Verified by Experts

(a) The electric field is `E=V//d`
`=(0.50V)/(5.0xx10^(-7)m)=1.0xx10^(6)V//m`
(b)
Suppose the electron has a speed `v_(1)` when it enters the depletion layer and `v_(2)` when it comes out of it.
As the potential energy increases by e x 0.50 V, from the principle of conservation of energy.
`(1)/(2)mupsilon_(1)^(2)=exx0.50+(1)/(2)mupsilon_(2)^(2)`
`(1)/(2)(9.1xx10^(-31))(5xx10^(5))^(2)`
`=1.6xx10^(-19)xx0.5+(1)/(2)xx9.1xx10^(-31)xxupsilon_(0)^(2)`
Solving this, `upsilon_(2)=2.7xx10^(5)m//s`.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE - IA|54 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE - IB|7 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise PRACTICE EXERCISE (LOGIC GATES )|15 Videos
  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos
  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0xx10^(-7)m , wide the intensity of the electric field in this region is

A potential barrier of 0.3 V exists across a p-n junction. If the depletion region is 1 mu m wide, what is the intensity of electric field in this region?

If an electron approaches the p-n junction from the n-side with a speed of 5 xx 10^5 m s^(-1) ,with what speed will it enter the p-side?

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V What will be the intensity of electric field in this region ?

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 1V . The electric field produced is

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 0.1V . The electric field produced is

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

A potential difference of 5V is applied across a conductor of length 10 cm. IF drift of electron is 2.5 xx 10^(-4) m//s , then electron mobility in SI unit is

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

AAKASH SERIES-SEMICONDUCTOR DEVICES-PROBLEMS
  1. In the circuit shown, the potential drop across each capacitor is (ass...

    Text Solution

    |

  2. Two junction diodes one of germanium (Ge) and other of sillicon (Si) a...

    Text Solution

    |

  3. A potential barrier of 0.50V exists across a p-n junction.(a) If the d...

    Text Solution

    |

  4. The circuit shown in figure contains two diodes each with a forward re...

    Text Solution

    |

  5. The applied input ac power to a half wave rectifier is 100 W. The dc o...

    Text Solution

    |

  6. A p-n diode is used in a half wave rectifier with a load resistance of...

    Text Solution

    |

  7. A full wave rectifier uses two diodes with a load resistance of 100 O...

    Text Solution

    |

  8. Considering the circuit and data given in the diagram calculate the cu...

    Text Solution

    |

  9. The current through a P-N junction diode is 55mA at a forward bias vol...

    Text Solution

    |

  10. If a p-n junction diode, a square input signal of 10V is applied as sh...

    Text Solution

    |

  11. For the circuit shown in Fig. find 1) the output voltage 2) the vo...

    Text Solution

    |

  12. A Zener diode is specified as having a breakdown voltage of 9.1 V,with...

    Text Solution

    |

  13. In a single state transistor amplifier, when by 10muA and collector cu...

    Text Solution

    |

  14. AP-N-P transistor is used in common-emitter mode in an amplifier circu...

    Text Solution

    |

  15. For a transistor beta=45, the change in the voltage across 5kOmega res...

    Text Solution

    |

  16. In a transistor beta=45, the change in the voltage across 5 kOmega res...

    Text Solution

    |

  17. Current amplification factor of a common base configuration is 0.88. F...

    Text Solution

    |

  18. In a transistor, ihe emitter circuit resis- tance is 100Omega and the ...

    Text Solution

    |

  19. An n-p-n transistor in a common-emitter mode is used as a simple volta...

    Text Solution

    |

  20. In the following common - emitter configuration an n-p-n transistor wi...

    Text Solution

    |