Pure `Si` at `500K` has equal number of electron `(n_(e))` and hole `(n_(h))` concentration of `1.5xx10^(16)m^(-3)`. Dopping by indium. Increases `n_(h)` to `4.5xx10^(22) m^(-3)`. The doped semiconductor is of

Options

A. P - type having electron concentrations `n_(e)=5xx10^(9)m^(-3)`
B. n - Type with electron concentrations `n_(e)=5xx10^(22)m^(-3)`
C. P - Type with electron concentrations `n_(e)=2.5xx10^(10)m^(-3)`
D. n - Type with electron concentrations `n_(e)=2.5xx10^(23)m^(-3)`

Answer

A

Explanation

`n_en_h=n_(i)^(2)`
`n_eN_A=n_(i)^(2)`
`n_e=(n_(i)^(2))/(N_A)=((1.5xx10^16)^2)/(4.5xx10^22)=5xx10^9//m^3`