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The minimum potential difference between...

The minimum potential difference between the base and emitter required to switch a silicon transistor ON is approximately?

A

1V

B

3V

C

5V

D

4.2V

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A
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
  1. The concentration of impurities in a transistor is

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  2. In a transistor, the collector current is always · less then the emitt...

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  3. The minimum potential difference between the base and emitter required...

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  4. Which of the following represents NAND gate ?

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  5. The circuit is equivalent to

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  6. The output y, when all three inputs are first high and then low, will ...

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  7. A silicon specimen is made into a P-type semiconductor by doping, on a...

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  8. Consider the junction diode is ideal. The value of current through the...

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  9. Negative feedback

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  10. The current obtained from a simple filterless reactifier is

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  11. The depletion region of p-n junction has a thickness of the order of

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  12. In a properly biased transistor-

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  13. In an n-p-n transistor, the collector current is 10 mA. If 90% of the ...

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  14. Application of a forward biase to a p-n junction:

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  15. Intrinsic semiconductor at absolute zero temperature is a

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  16. An NPN-transistor circuit is arranged as shown in figure. It is

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  17. Four equal resistors, each of resistance 10 ohm are connected as shown...

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  18. In a semiconducting material the mobilities of electrons and holes are...

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  19. Which of the following logic gates is a universal gate ?

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  20. A full wave rectifier circuit along with the input and output are show...

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