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In a p-n junction diode having depletion...

In a `p-n` junction diode having depletion layer of thickness `10^(-6)m`, the potential across it is `0.1V`. The electric field produced is

A

`10^(7)Vm^(-1)`

B

`10^(-6) Vm^(-1)`

C

`10^(5) Vm^(-1)`

D

`10^(-5) Vm^(-1)`

Text Solution

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The correct Answer is:
C
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
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  2. Application of a forward biase to a p-n junction:

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  4. An NPN-transistor circuit is arranged as shown in figure. It is

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  6. In a semiconducting material the mobilities of electrons and holes are...

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  7. Which of the following logic gates is a universal gate ?

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  8. A full wave rectifier circuit along with the input and output are show...

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  9. In a p-n junction diode having depletion layer of thickness 10^(-6)m, ...

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  10. What is the voltage gain in a common emitter amplifier, where output r...

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  11. Barrier potential of a p-n junction diode does not depend on

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  12. To which logic gate does the truth tabel given in the figure correspon...

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  13. Which of the following is not equal to 1 in Boolean algebra ?

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  14. In a p-n junction , the barrier potential offers resistance to

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  15. Which of the following diodes is used in unbiased condition ?

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  16. Which of the following materials can be used for making solar cell ?

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  17. If a full wave reactifier circuit is operating from 50 Hz mains, the f...

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  19. The P-N junction is-

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