Home
Class 12
PHYSICS
Assertion:The dominant mechanism for mot...

Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon `P-N` junction are drift in both forward and reverse biase.
Reason: In reverse biasing, no current flow through the junction.

A

If both the assertion and reason are true and reason is a true explantion of the assertion.

B

If both the assertion and reason are true but the reason is not true the correct explantion of the assertion.

C

If the assertion is true but reason false

D

If both the assertion and reason are false.

Text Solution

Verified by Experts

The correct Answer is:
D

In `PN`-junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the function, when reverse biased. The reverse biase opposes the majority carriers but makes the minority carriers to cross the `PN`-junction. thus the small current in `muA` flows during reverse biase.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise AIPMT/NEET Questions|77 Videos
  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise AIIMS Questions|38 Videos
  • SEMICONDUCTOR ELECTRONICS

    A2Z|Exercise Problems Based On Mixed Concepts|32 Videos
  • NUCLEAR PHYSICS

    A2Z|Exercise Section D - Chapter End Test|29 Videos
  • SOURCE AND EFFECT OF MAGNETIC FIELD

    A2Z|Exercise Section D - Chapter End Test|30 Videos

Similar Questions

Explore conceptually related problems

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N juntions are-

What accounts for the flow of charge carriers in forward and reverse biasing of sillicon P-N diode-

The reverse biasing in a PN junction diode

Explain the working of p-n junction diode in forward and reverse biased mode.

The approximate ratio of resistance in the forward and reverse biase of the PN- junction diode is

A2Z-SEMICONDUCTOR ELECTRONICS-Section B - Assertion Reasoning
  1. Assertion : An N-type semiconductor has a large number of electrons bu...

    Text Solution

    |

  2. Assertion : The crystalline solids have a sharp melting point. Reaso...

    Text Solution

    |

  3. Assertion: Silicon is preferred over germanium for making semiconducto...

    Text Solution

    |

  4. Assertion: Two P-N junction diodes placed back to back, will work as a...

    Text Solution

    |

  5. Assertion : In transistor common emitter mode as an amplifier is pref...

    Text Solution

    |

  6. Assertion:The dominant mechanism for motion of charge carriers in forw...

    Text Solution

    |

  7. Assertion: A transistor is a voltage-operating device. Reason: Base ...

    Text Solution

    |

  8. Assertion: NAND or NOR gates are called digital building blocks. Rea...

    Text Solution

    |

  9. Assertion: At 0K germanium is a superconductor. Reason: At 0K german...

    Text Solution

    |

  10. Assertion: Base in transistor is made very thin as compared to collect...

    Text Solution

    |

  11. Assertion: The current gain in common base circuit is always less than...

    Text Solution

    |

  12. Assertion: V-i charcteristic of P-N junction diode is same as that of ...

    Text Solution

    |

  13. Assertion: Zener diode works on a principle of of breakdown voltage. ...

    Text Solution

    |

  14. Assertion: NOT gate is also called inverter circuit. Reason: NOT gat...

    Text Solution

    |

  15. Assertion: In vacuum tubes (vales), vacuum is necessary for the moveme...

    Text Solution

    |

  16. Assertion: The following circuit represents 'OR' gate Reason: For...

    Text Solution

    |

  17. Assertion: A P-N photodiode is made from a semiconductor for which E(...

    Text Solution

    |

  18. Assertion: When PN-junction is forward biased then motion of charge ca...

    Text Solution

    |

  19. Assertion: De Morgan's theoram bar(A+B)=bar(A).bar(B) may be explained...

    Text Solution

    |

  20. Assertion: In the following circuit the potential drop across the resi...

    Text Solution

    |