Home
Class 12
PHYSICS
In a p-n junction diode having depletion...

In a `p-n` junction diode having depletion layer of thickness `10^(-6)m`, the potential across it is `0.1V`. The electric field produced is

Text Solution

Verified by Experts

The correct Answer is:
C
`E=(V)/(d)`
Promotional Banner

Topper's Solved these Questions

  • EXPERIMENTAL PHYSICS

    NARAYNA|Exercise Level-v(Single answer)|23 Videos

  • EXPERIMENTAL PHYSICS

    NARAYNA|Exercise Multiple answer|6 Videos

  • ELECTROSTATICS AND GAUSS LAW

    NARAYNA|Exercise Intergers type question|11 Videos

  • MAGNETISM

    NARAYNA|Exercise LEVEL-II (H.W)|24 Videos

Similar Questions

Explore conceptually related problems

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is

In a p-n junction, the thickness of the depletion layer is 10^(-6) m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

In a p-n junction diode the thickness of deplection layer is 2 xx 10^(-6) m and barrier potential is 0.3 V . The intensity of the electrical field at the junction is.

A potential barrier of 0.5V exists across a p-n junction . If the widht of depletion layer is 10^(-6) m, then intensity of electric field in this region will be

A potential barrier of 0.50V exists a p-n junction. If the width of depletion layer is 10^(6)m , then intensity of electric field in this region will be