Home
Class 11
PHYSICS
Two junction diodes, one of germanium (...

Two junction diodes, one of germanium `(Ge)` and other of silicon `(Si)` are connected as shown in fig to a battery of `12 V` and a load resistance `10 kOmega`. The germanium diode conducts at `0.3 V` and silicon diode at `0.7 V`. When current flows in the circuit, the potential of terminal `Y` will be
.

A

12V

B

11V

C

11.3V

D

11.7V

Text Solution

Verified by Experts

The correct Answer is:
D

After a 0.3 volt drop across Ge diode. It will start conducting
output `=12-0.3 =11.7 V`
Promotional Banner

Topper's Solved these Questions

  • RIGID BODY DYNAMICS

    RESONANCE|Exercise Exercise|53 Videos
  • SIMPLE HARMONIC MOTION

    RESONANCE|Exercise Exercise|28 Videos

Similar Questions

Explore conceptually related problems

A p-n junction diode in forward bias is connected to a battery of 4 V and a resistance of 80 omega as shown in the ajoining determine the maximum current in the circuit barrier potential of p-n diode is 0.2 V

A P-N junction diode connected to a battery of e.m.f. 4.5 V and an external resistance of 1000 Omega . What is the value of current in the circuit, if potential barrier in the diode = 0.5 V

A battery of emf 10 V and internal resistance 3Omega is connected to a resistor. The current in the circuit is 0.5 A . The terminal voltage of the battery when the circuit is closed is

In the given figure, a diode D is connected to an external resistance R=100 Omega and an emf of 3.5 V . If the barrier potential developed across the diode is 0.5 V , the current in the circuit will be :

A p n junction diode is connected to a battery of 2 v and a resistance of 8 ohm as shown in figure calculate the current passing through the resistor

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V_(0) changes by

RESONANCE-SEMICONDUCTORS-Exercise
  1. A sinusoidal voltage of peak value 200 volts is connected to a diode a...

    Text Solution

    |

  2. In the figure, the input is across the terminals A and C and the o...

    Text Solution

    |

  3. Two junction diodes, one of germanium (Ge) and other of silicon (Si) ...

    Text Solution

    |

  4. The circuit shown in figure (1) Contains two diodes each with a forwar...

    Text Solution

    |

  5. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  6. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  7. When p-n junction diode is forward biased then

    Text Solution

    |

  8. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  9. In a common base ampifier , the phase difference between the input sig...

    Text Solution

    |

  10. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

    Text Solution

    |

  11. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  12. In a common base mode of a transition , the collector current is 5.48...

    Text Solution

    |

  13. A working transitor with its three legs marked P, Q and R is tested us...

    Text Solution

    |

  14. The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as s...

    Text Solution

    |

  15. In a....... baised pn junction , the net flow of holes is from the n ...

    Text Solution

    |

  16. In a p-n junction photo cell, the value of the photo electromotive for...

    Text Solution

    |

  17. Carbon , silicon and germanium have four valence elcectrons each . The...

    Text Solution

    |

  18. For a transistor amplifier, the voltage gain

    Text Solution

    |

  19. In a transistor connected in a common emitter mode RC = 4kOmega, R1 = ...

    Text Solution

    |

  20. In the figure shown RB = 500K Omega, RC = 8K Omega, VBB= 10.6 V and V(...

    Text Solution

    |