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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

A

`5xx10^(9)`

B

`7xx10^(9)`

C

`9xx10^(9)`

D

`8xx10^(9)`

Text Solution

Verified by Experts

The correct Answer is:
A
We know that ofr a doped semiconducor in thermal equilibrium, we have `n_(e)n_(k)=n_(1)^(2)`,
AS per given data , `n_(i)=1.5xx10^(-16)m^(-3)`
`n_(h)=4.5xx10^(22)m^(-3)`
Thus `n_(e)=(n_(i)^(2))/(n_(h))=((1.5xx10^(16))^(2)m^(-6))/(4.5xx10^(22)m^(-3))=5.0xx10^(9) m^(-3)`
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