Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that `n_(i)=1.5xx10^(16)m^(-3)`.

Text Solution

Verified by Experts

`4.5 xx 10^(9) m^(-3) ,5 xx 10^(22) m^(-3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise CONCEPUAL QUESTIONS|37 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise TOUGH & TRICKY PROBLEMS|10 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST FOR BOARD EXAMINATION|12 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|14 Videos
  • WAVE OPTICAL

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|7 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -PRACTICE PROBLEMS
  1. A pure semiconductor of volume 3.5 xx10^(-7) m^(3) contains 5xx10^(2...

    Text Solution

    |

  2. The mean free path of conduction electron in a metallic block is 5x...

    Text Solution

    |

  3. Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3). It is doped b...

    Text Solution

    |

  4. In pure silicon semiconductor having same electron and hole concentrat...

    Text Solution

    |

  5. A semiconductor has equal electron and hole concentration of 6xx...

    Text Solution

    |

  6. The separation between conduction band of electromagnetic radiation ...

    Text Solution

    |

  7. The fobbidden gap in an ntype semiconductor is 4 me v so that the ele...

    Text Solution

    |

  8. A type semiconductor sample has electron and hole concentration of 1...

    Text Solution

    |

  9. The value of forward current in ap-n junction at 0.1 V is 1.04 xx10^(-...

    Text Solution

    |

  10. The values of v and I for silicon diode is given as follows Using...

    Text Solution

    |

  11. Voltage drop across a p-n junction in forward bias is 0.5 V a battery ...

    Text Solution

    |

  12. A p-n junction diode in forward bias is connected to a battery of 4 V...

    Text Solution

    |

  13. Two diodes with internal resistance of 20 omega each are used in a ful...

    Text Solution

    |

  14. The rms value of input voltage in a full wave rectifier is 12 V determ...

    Text Solution

    |

  15. In a Zener regulated power supply a Zener diode with V(Z) = 6.0 V is u...

    Text Solution

    |

  16. A 10V of zener diode is connected in series to a resistance across a ...

    Text Solution

    |

  17. From the output characteristics of common emitter circuit shown in Fig...

    Text Solution

    |

  18. In a common emitter transistor the potential drop across the collect...

    Text Solution

    |

  19. In a common base transistor the value of load resistance in output a...

    Text Solution

    |

  20. In a semiconductor transistor there is change in collector current of ...

    Text Solution

    |