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Forbidden energy gap of Ge is 0.75eV, ma...

Forbidden energy gap of Ge is `0.75eV`, maximum wave length of incident radiation for producing electron-gole pair in germanium semiconductor is

A

`4200A^(@)`

B

`16500A^(@)`

C

`4700A^(@)`

D

`4000A^(@)`

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The correct Answer is:
To find the maximum wavelength of incident radiation that can produce an electron-hole pair in germanium (Ge) with a forbidden energy gap of 0.75 eV, we can use the relationship between energy and wavelength. ### Step-by-Step Solution: 1. **Understand the relationship between energy and wavelength**: The energy (E) of a photon is related to its wavelength (λ) by the equation: \[ E = \frac{hc}{\lambda} \] where: - \(E\) is the energy in joules, - \(h\) is Planck's constant (\(6.63 \times 10^{-34} \, \text{m}^2 \text{kg/s}\)), - \(c\) is the speed of light (\(3 \times 10^8 \, \text{m/s}\)), - \(\lambda\) is the wavelength in meters. 2. **Convert the energy gap from eV to joules**: The energy gap given is 0.75 eV. To convert this to joules, we use the conversion factor \(1 \, \text{eV} = 1.6 \times 10^{-19} \, \text{J}\): \[ E = 0.75 \, \text{eV} \times 1.6 \times 10^{-19} \, \text{J/eV} = 1.2 \times 10^{-19} \, \text{J} \] 3. **Rearrange the equation to solve for wavelength**: We need to find the maximum wavelength (\(\lambda_{\text{max}}\)): \[ \lambda_{\text{max}} = \frac{hc}{E} \] 4. **Substitute the values into the equation**: Substitute \(h\), \(c\), and \(E\) into the equation: \[ \lambda_{\text{max}} = \frac{(6.63 \times 10^{-34} \, \text{m}^2 \text{kg/s}) \times (3 \times 10^8 \, \text{m/s})}{1.2 \times 10^{-19} \, \text{J}} \] 5. **Calculate the wavelength**: \[ \lambda_{\text{max}} = \frac{1.989 \times 10^{-25} \, \text{m}^2 \text{kg/s}}{1.2 \times 10^{-19} \, \text{J}} \approx 1.6575 \times 10^{-6} \, \text{m} \] Converting this to nanometers (1 m = \(10^9\) nm): \[ \lambda_{\text{max}} \approx 16575 \, \text{nm} = 16500 \, \text{Å} \, (\text{since } 1 \, \text{nm} = 10 \, \text{Å}) \] 6. **Final Answer**: The maximum wavelength of incident radiation for producing an electron-hole pair in germanium is approximately \(16500 \, \text{Å}\).
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RESONANCE ENGLISH-SEMICONDUCTORS-Exercise
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  5. The intrinsic carrier density in germanium crystal at 300 K is 2.5xx10...

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  6. Pure Si at 300 K has equal electron (ne) and hole (n(h)) concentration...

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  7. The length of a germanium rod is 0.58 cm and its area of cross-section...

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  9. p-n junction is

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  10. Diffusion current in a p-n junction is greater than the drift current ...

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  11. In a p-n junction diode, change in temperature due to heating

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  12. A hole diffuses from the p-side to the n-side in a p-n junction.This m...

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  13. The depletion region of a P-N diode, under open circuit condition cont...

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  14. Which is the wrong statement in following sentence? A device in which ...

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  15. The depletion layer in the p-n junction region is caused by

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  16. The contact potential at the junction site in a P-N junction is-

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  17. When value of current increase in P-N junction, then the value of cont...

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  20. The diffusion current in a p-n junction is

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