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Lets npand ne be the number of holes and...

Lets `n_p`and `n_e` be the number of holes and conduction electrons in an intrinsic semiconductor.

A

`np gt n_c`

B

`n_p = n_e`

C

`n_p lt n_e`

D

`n_p ne n_e`

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The correct Answer is:
B
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. In case of a semi conductor, which one of the following statements is ...

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  2. An electric field us applied to a semiconductor.Let the number of char...

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  3. Lets npand ne be the number of holes and conduction electrons in an in...

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  4. If the two ends of a p-n junction are joined by a wire .

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  5. The drift current in a p-n junction is

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  6. The diffusion current in a p-n junction is

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  7. Diffusion current in a p-n junction is greater than the drift current ...

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  8. In an intrinsic semiconductor, the fermi energy level lies

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  9. Which of the following statements is not true?

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  10. The mobility of free electron is greater than that of free holes becau...

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  11. Pick out the incorrect statement

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  12. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  13. Pure semiconductor is known as

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  14. A doped semiconductor is

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  15. The potential barrier, in the depletion layer , is due to

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  16. A hole is

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  17. The donor impurity to be added for doping germanium crystal, will be o...

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  18. A P-type semiconductor can be formed by doping Si or Ge with

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  19. An-type and P-type silicon can be obtained by doping pure silicon with

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  20. An-type and P-type silicon can be obtained by doping pure silicon with

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