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The drift current in a p-n junction is...

The drift current in a p-n junction is

A

from the n- side to the p - side

B

from the p - side to the n - side

C

from the n-side to the p-side if the junction is forward - biased and in the opposite direction if it is reverse - biased

D

from the p-side to the n-side if the junction is forward - biased and in the opposite direction if it is reverse - biased

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The correct Answer is:
A
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Lets npand ne be the number of holes and conduction electrons in an in...

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  2. If the two ends of a p-n junction are joined by a wire .

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  3. The drift current in a p-n junction is

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  4. The diffusion current in a p-n junction is

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  5. Diffusion current in a p-n junction is greater than the drift current ...

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  6. In an intrinsic semiconductor, the fermi energy level lies

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  7. Which of the following statements is not true?

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  8. The mobility of free electron is greater than that of free holes becau...

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  9. Pick out the incorrect statement

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  10. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  11. Pure semiconductor is known as

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  12. A doped semiconductor is

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  13. The potential barrier, in the depletion layer , is due to

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  14. A hole is

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  15. The donor impurity to be added for doping germanium crystal, will be o...

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  16. A P-type semiconductor can be formed by doping Si or Ge with

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  17. An-type and P-type silicon can be obtained by doping pure silicon with

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  18. An-type and P-type silicon can be obtained by doping pure silicon with

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  19. At room temperature, a p-type semiconductor has

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  20. In an n-type semiconductor, the fermi energy level lies

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