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Which of the following statements is not...

Which of the following statements is not true?

A

the resistance of intrinsic semiconductors decreases with increase of temperature

B

doping pure Si with trivalent impurities give p-type semiconductors

C

the majority charge carries in n-type semiconductors are holes

D

a p-n junction can act as a semiconductor diode

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AI Generated Solution

The correct Answer is:
To solve the question "Which of the following statements is not true?" regarding semiconductor devices, we will analyze each statement provided in the options systematically. ### Step-by-Step Solution: 1. **Analyze the First Statement:** - **Statement:** "The resistance of intrinsic semiconductors decreases with increase of temperature." - **Explanation:** In intrinsic semiconductors, as the temperature increases, more electrons gain enough energy to jump from the valence band to the conduction band. This leads to an increase in the number of charge carriers (electrons), which in turn increases conductivity and decreases resistance. - **Conclusion:** This statement is **true**. 2. **Analyze the Second Statement:** - **Statement:** "Doping pure semiconductor or silicon with trivalent impurity gives p-type semiconductors." - **Explanation:** Doping silicon (which has four valence electrons) with a trivalent impurity (like boron or aluminum, which has three valence electrons) creates "holes" in the crystal structure where an electron is missing. These holes act as positive charge carriers, leading to the formation of a p-type semiconductor. - **Conclusion:** This statement is **true**. 3. **Analyze the Third Statement:** - **Statement:** "The majority charge carriers in n-type semiconductor are holes." - **Explanation:** In n-type semiconductors, silicon is doped with a pentavalent impurity (like phosphorus), which has five valence electrons. This results in an excess of electrons, making electrons the majority charge carriers, while holes are the minority carriers. - **Conclusion:** This statement is **false**. 4. **Analyze the Fourth Statement:** - **Statement:** "A p-n junction can act as a semiconductor diode." - **Explanation:** A p-n junction is the fundamental structure of a semiconductor diode. It allows current to flow in one direction while blocking it in the opposite direction, which is the defining characteristic of a diode. - **Conclusion:** This statement is **true**. ### Final Conclusion: The statement that is **not true** is the third statement: "The majority charge carriers in n-type semiconductor are holes." Therefore, the answer to the question is that the third statement is false.
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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