Home
Class 12
PHYSICS
Pick out the incorrect statement...

Pick out the incorrect statement

A

This current doubles for every `100^@`C rise in temperature

B

This current is due to minority charge carriers

C

Reverse saturation current is also known as leakage current

D

Width of depletion layer increases

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (P-N JUNCTION DIODE)|30 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (TRANSISTORS)|22 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXAMPLES|56 Videos

  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos

  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

Pick out the correct statement.

Pick out the correct statement(s):

Pick out the correct statement(s):

Pick out the correct statement (s):

Pick out the correct statement from among the four:

Pick out the correct statement : In a multielectron atom

Pick out the correct statement from the following

Pick out the correct statement from the following

Pick out the correct statement from the following.

Pick out the correct statement from following

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

    Text Solution

    |

  2. In an intrinsic semiconductor, the fermi energy level lies

    Text Solution

    |

  3. Which of the following statements is not true?

    Text Solution

    |

  4. The mobility of free electron is greater than that of free holes becau...

    Text Solution

    |

  5. Pick out the incorrect statement

    Text Solution

    |

  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

    Text Solution

    |

  7. Pure semiconductor is known as

    Text Solution

    |

  8. A doped semiconductor is

    Text Solution

    |

  9. The potential barrier, in the depletion layer , is due to

    Text Solution

    |

  10. A hole is

    Text Solution

    |

  11. The donor impurity to be added for doping germanium crystal, will be o...

    Text Solution

    |

  12. A P-type semiconductor can be formed by doping Si or Ge with

    Text Solution

    |

  13. An-type and P-type silicon can be obtained by doping pure silicon with

    Text Solution

    |

  14. An-type and P-type silicon can be obtained by doping pure silicon with

    Text Solution

    |

  15. At room temperature, a p-type semiconductor has

    Text Solution

    |

  16. In an n-type semiconductor, the fermi energy level lies

    Text Solution

    |

  17. The band diagrams of three semiconductors are given in the figure. Fro...

    Text Solution

    |

  18. The element that can be used as an acceptor impurity to doped silicon ...

    Text Solution

    |

  19. In extrinsic semiconductors

    Text Solution

    |

  20. In an intrinsic semiconductor at room temperature, number of electrons...

    Text Solution

    |