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Pure semiconductor is known as...

Pure semiconductor is known as

A

an infinite resistance at `0^@` C

B

a finite resistance which doesn't depend upon temperature

C

a finite resistance which increases with increase of temperature

D

a finite resistance which decreases with increase of temperature

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The correct Answer is:
D
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A pure semiconductors

A semiconductor is known to have an electron concentration of 6xx10^(12) per cubic centimeter and a hole concentration of 9xx10^(13) per cubic centimeter. Is this semiconductor N-type or P-type ?

A semiconductor is known to have an electron concentration of 6xx10^(12) per cubic centimeter and a hole concentration of 8xx10^(13) per cubic centimeter. Is this semiconductor N-type or P-type ?

n-type semiconductor is

A: When a pure semiconductor is doped with a pentavalent impurity, the number of conduction electrons is increased while the number of holes is decreased R: Some of the holes get recombined with the conduction electrons as the concentration of the conduction electrons is increased.

In a semiconductor,

A: The conductivity of a pure semiconductor increases on doping R: Doping causes the reduction in bond strength.

Assertion : A pure semiconductor has negative temperature coefficient of resistance. Reason: On raising the temperature, more charge carriers are released,. conductance increases and resistance decreases.

Draw the Energy bands 'diagrams for a (i) pure semiconductor , (ii) insulator , How does the energy band, for a pure semiconductor , get affected when this semiconductor is doped with (a) an acceptor impurity (b) donor impurity ? Hence discuss why the 'holes' and the 'electrons' respectively, become the 'majority change carries' in these two cases ? Write the two processes involved in the formation of p-n junction.

Photovoltaic cells are semiconductors of

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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