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The donor impurity to be added for dopin...

The donor impurity to be added for doping germanium crystal, will be of valency

A

2

B

3

C

4

D

5

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The correct Answer is:
To determine the valency of the donor impurity that should be added for doping a germanium crystal, we can follow these steps: ### Step-by-Step Solution: 1. **Understand the Concept of Doping**: Doping is the process of adding impurities to a semiconductor to change its electrical properties. There are two types of doping: n-type and p-type. 2. **Identify the Type of Doping**: In this question, we are concerned with donor impurities, which are typically associated with n-type doping. Donor impurities provide extra electrons to the semiconductor. 3. **Know the Valency of Germanium**: Germanium (Ge) is a group IV element, which means it has 4 valence electrons. 4. **Determine the Valency of Donor Impurities**: Donor impurities are usually pentavalent, meaning they have 5 valence electrons. When a pentavalent atom (like phosphorus, arsenic, or antimony) is introduced into the germanium crystal, it forms covalent bonds with the germanium atoms. 5. **Analyze the Bonding**: When a pentavalent atom bonds with germanium, it shares 4 of its electrons with the 4 valence electrons of germanium. However, it has one extra electron that does not participate in bonding. This extra electron becomes free and acts as a charge carrier. 6. **Conclusion**: Since pentavalent atoms have a valency of 5, the correct answer to the question is that the donor impurity to be added for doping germanium crystal will have a valency of 5. ### Final Answer: The donor impurity to be added for doping germanium crystal will be of valency 5. ---
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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