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An-type and P-type silicon can be obtain...

An-type and P-type silicon can be obtained by doping pure silicon with

A

Arsenic and Phosphorous

B

Indium and Aluminium

C

Phosphorous and Indium

D

Aluminium and Boron

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The correct Answer is:
To solve the question regarding the doping of pure silicon to obtain n-type and p-type silicon, we can follow these steps: ### Step 1: Understand the Types of Doping - **N-type Silicon**: This is created by doping silicon with pentavalent impurities. These impurities have five valence electrons, which provide extra electrons to the silicon lattice, making electrons the majority charge carriers. - **P-type Silicon**: This is created by doping silicon with trivalent impurities. These impurities have three valence electrons, creating "holes" in the silicon lattice, making holes the majority charge carriers. ### Step 2: Identify Pentavalent and Trivalent Elements - **Pentavalent Elements** (for n-type): Arsenic (As), Phosphorus (P) - **Trivalent Elements** (for p-type): Boron (B), Aluminium (Al), Indium (In), Gallium (Ga) ### Step 3: Analyze the Given Options The options provided are: 1. Arsenic and Phosphorus 2. Indium and Aluminium 3. Phosphorus and Indium 4. Aluminium and Boron - **Option 1**: Arsenic and Phosphorus - Correct. Arsenic and Phosphorus are both pentavalent, suitable for n-type. - **Option 2**: Indium and Aluminium - Incorrect. Both are trivalent, suitable for p-type, not n-type. - **Option 3**: Phosphorus and Indium - Incorrect. Phosphorus is pentavalent (n-type), but Indium is trivalent (p-type). - **Option 4**: Aluminium and Boron - Incorrect. Both are trivalent, suitable for p-type, not n-type. ### Step 4: Conclusion From the analysis, the correct answer for obtaining n-type and p-type silicon through doping is **Option 1: Arsenic and Phosphorus** for n-type, and **Option 4: Aluminium and Boron** for p-type. ### Final Answer An n-type and p-type silicon can be obtained by doping pure silicon with **Arsenic (for n-type)** and **Boron (for p-type)**. ---
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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