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At room temperature, a p-type semiconduc...

At room temperature, a p-type semiconductor has

A

large number of holes and few electrons

B

large number of free electrons and few holes

C

equal number of free electrons and holes

D

large number of holes and electrons

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The correct Answer is:
To solve the question regarding the characteristics of a p-type semiconductor at room temperature, we can follow these steps: ### Step-by-Step Solution: 1. **Understanding P-Type Semiconductors**: - A p-type semiconductor is formed by doping a pure semiconductor (like silicon) with a trivalent impurity (like aluminum). This means that the dopant has three valence electrons. 2. **Formation of Holes**: - When a trivalent atom is introduced into the silicon lattice, it forms covalent bonds with the surrounding silicon atoms. However, since it has only three valence electrons, one silicon atom will not have a complete bond, resulting in a 'hole' (a vacancy where an electron could be). 3. **Charge Carriers in P-Type Semiconductors**: - In a p-type semiconductor, holes act as the majority charge carriers because they are created in larger numbers due to the presence of the trivalent impurity. - Electrons, which are the minority charge carriers, are present in much smaller quantities. 4. **Behavior at Room Temperature**: - At room temperature, the thermal energy allows some electrons to jump from the valence band to the conduction band, but the number of holes remains significantly larger than the number of free electrons. 5. **Conclusion**: - Therefore, the correct statement about a p-type semiconductor at room temperature is that it has a large number of holes and few electrons. ### Final Answer: The correct option is: **Large number of holes and few electrons**. ---
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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