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In an n-type semiconductor, the fermi en...

In an n-type semiconductor, the fermi energy level lies

A

in the forbidden energy gap nearer to the conduction band

B

in the forbidden energy gap nearer to the valence band

C

in the middle of forbidden energy gap

D

outside the forbidden energy gap

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### Step-by-Step Solution: 1. **Understanding Semiconductors**: - A semiconductor has two main energy bands: the conduction band (CB) and the valence band (VB). The energy gap between these two bands is known as the forbidden energy gap. 2. **Identifying n-type Semiconductors**: - In n-type semiconductors, extra electrons are introduced into the material, typically through doping with elements that have more valence electrons than the semiconductor itself (like phosphorus in silicon). These extra electrons become the majority charge carriers. 3. **Fermi Energy Level in Semiconductors**: - The Fermi energy level (E_F) represents the energy level at which the probability of finding an electron is 50%. In intrinsic (pure) semiconductors, the Fermi level lies approximately in the middle of the forbidden energy gap. 4. **Position of Fermi Level in n-type Semiconductors**: - Since n-type semiconductors have an abundance of electrons, the Fermi level shifts closer to the conduction band. This is because the presence of extra electrons increases the probability of finding an electron in the conduction band. 5. **Conclusion**: - Therefore, in an n-type semiconductor, the Fermi energy level lies in the forbidden energy gap, specifically nearer to the conduction band. ### Final Answer: The Fermi energy level in an n-type semiconductor lies nearer to the conduction band.
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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