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The element that can be used as an accep...

The element that can be used as an acceptor impurity to doped silicon is

A

Antimony

B

Arsenic

C

Boron

D

Phosphorous

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The correct Answer is:
To determine the element that can be used as an acceptor impurity to dope silicon, we can follow these steps: ### Step 1: Understand the Doping Process Silicon (Si) is a semiconductor that has four valence electrons, allowing it to form four covalent bonds with neighboring silicon atoms. Doping silicon involves introducing impurities to modify its electrical properties. **Hint:** Doping can create either n-type or p-type semiconductors depending on the type of impurity used. ### Step 2: Identify Acceptor and Donor Impurities - **Acceptor impurities** are elements that have fewer valence electrons than silicon (i.e., trivalent elements). When these elements are added to silicon, they create "holes" in the crystal lattice, which can accept electrons. - **Donor impurities** have more valence electrons than silicon (i.e., pentavalent elements). They provide extra electrons to the silicon lattice. **Hint:** Remember that trivalent elements can accept electrons, while pentavalent elements can donate electrons. ### Step 3: Analyze the Given Options The options provided are: 1. Antimony (Sb) - Pentavalent 2. Arsenic (As) - Pentavalent 3. Boron (B) - Trivalent 4. Phosphorus (P) - Pentavalent **Hint:** Focus on the valency of each element to determine whether it can act as an acceptor or donor. ### Step 4: Determine Which Element is Trivalent From the options: - Antimony, Arsenic, and Phosphorus are all pentavalent (5 valence electrons). - Boron is trivalent (3 valence electrons). Since we need a trivalent element to act as an acceptor impurity, Boron is the only suitable choice. **Hint:** Look for elements in Group 13 of the periodic table, as they typically have three valence electrons. ### Step 5: Conclusion The element that can be used as an acceptor impurity to dope silicon is **Boron (B)**. **Final Answer:** Boron
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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