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In extrinsic semiconductors...

In extrinsic semiconductors

A

The conduction Band and Valence Band overlap

B

The gap between Conduction Band and Valence Band is more than 16e V

C

The gap between C.B. and V.B. is nearly about 1 eV

D

The gap between C.B. and V.B. will be 100 V and more

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The correct Answer is:
C
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. In an intrinsic semiconductor, the fermi energy level lies

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  3. Which of the following statements is not true?

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  4. The mobility of free electron is greater than that of free holes becau...

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  5. Pick out the incorrect statement

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  6. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  7. Pure semiconductor is known as

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  8. A doped semiconductor is

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  9. The potential barrier, in the depletion layer , is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An-type and P-type silicon can be obtained by doping pure silicon with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. In an intrinsic semiconductor at room temperature, number of electrons...

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