Home
Class 12
PHYSICS
(A) : Silicon is preferred to germanium ...

(A) : Silicon is preferred to germanium while constructing zener diodes
(R): Thermal stability and current compatibility of silicon is high when compared to those of germanium.

A

Both 'A' and 'R' are true and 'R' is the correct explanation of 'A'

B

Both 'A' and 'R' are true and 'R' is not the correct explanation of 'A'

C

'A' is true and 'R' is false

D

'A' is false and 'R' is true

Text Solution

AI Generated Solution

The correct Answer is:
To solve the question regarding the preference of silicon over germanium in constructing zener diodes, we will analyze both the assertion (A) and the reason (R) provided. ### Step 1: Understand the Assertion (A) The assertion states: "Silicon is preferred to germanium while constructing zener diodes." - **Explanation**: Silicon is indeed the preferred material for zener diodes due to its superior electrical properties, particularly in terms of breakdown voltage and stability. ### Step 2: Understand the Reason (R) The reason states: "Thermal stability and current compatibility of silicon is high when compared to those of germanium." - **Explanation**: Silicon has better thermal stability than germanium. This means that silicon can operate at higher temperatures without degrading its performance. Additionally, silicon has a higher current carrying capacity, making it more reliable in various applications. ### Step 3: Evaluate the Relationship Between A and R Now we need to determine if the reason (R) correctly explains the assertion (A). - **Analysis**: The reason provided supports the assertion since the thermal stability and current compatibility of silicon are indeed key factors that make it preferable over germanium for zener diodes. ### Step 4: Conclusion Both the assertion (A) and the reason (R) are true, and the reason correctly explains why silicon is preferred over germanium. ### Final Answer The correct answer is: **Option A: Both A and R are true, and R is the correct explanation of A.** ---
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -II (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )|3 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -II (P-N JUNCTION DIODE)|26 Videos
  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (MORE THAN ONE OPTION TYPE QUESTIONS)|23 Videos
  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|60 Videos
  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

Two junction diodes, one of germanium (Ge) and other of silicon (Si) are connected as shown in fig to a battery of 12 V and a load resistance 10 kOmega . The germanium diode conducts at 0.3 V and silicon diode at 0.7 V . When current flows in the circuit, the potential of terminal Y will be .

In the circuit shown in figure, the silicon and germanium diodes start conducting at 0.7 V and 0.3 V respectively. What are the values of V_0 and I?

Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.

Statement-I : Germanium is preferred over silicon for making semiconductor devices Statement-II : Energy gap for Ge is more than that of SI

Correct statements among a to d regarding silicones are : (a) They are polymers with hydrophobic character. (b) They are biocompatible. ( c ) In general, they have high thermal stability and low dielectric strenght. (d) Usually, they are resistant to oxidation and used as greases.

Correct statements among a to d regarding silicones are : (a) They are polymers with hydrophobic character. (b) They are biocompatible. ( c ) In general, they have high thermal stability and low dielectric strenght. (d) Usually, they are resistant to oxidation and used as greases.

Consider a box with three terminals on top of it as shown in figure. Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure. The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are (i) When A is positive and B is negative (ii) When A is negative and B is positive (iii) When B is negative and C is positve (iv) When B is positive and C is neagtive (v) When A is positive and C is negative (vi) When A is negative and C is positive From these graphs of current - voltage characteristic shown in fig. (c) to (h) determine the arrangement of components between A, B and C.

The conducting rod ab shown in figure makes contact with metal rails ca and db . The apparatus is in a uniform magnetic field 0.800 T , perpendicular to the plane of the figure. (a) Find the magnitude of the emf induced in the rod when it is moving toward the right with a speed 7.50 m//s . (b) In what direction does the current flow in the rod? (c) If the resistance of the circuit abdc is 1.50 Omega (assumed to be constant), find the force (magnitude and direction) required to keep the rod moving to the right with a constant speed of 7.50 m//s . You can ignore friction. (d) Compare the rate at which mechanical work is done by the force (Fu) with the rate at which thermal energy is developed in the circuit (I^2R) .

Show graphically how electric resistance of a piece of Silicon or Germanium varies when its temperature is varied.

Only those atoms which four covalent bonds produce a repetitive three dimesional structure using only covalent bonds., e.g. , diamond structure.The latter is based on a FCC lattice where lattice points are occupied by carbon atoms.Every atom in this structure is surrounded tetrahedrally by four others.Germanium, silicon and grey tin also crystallize in the same way as diamond. (Given : N_A=6xx10^(23) sin 54^@44'=0.8164 ) If edge length of the cube is 3.60Å , then radius of carbon atom is